- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability molding compound meets ul 94 v-0 flammability rating packing code with suffix "g" menas green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm v dv/dt v/ s typ max typ max typ max typ max t j = 25c 0.69 0.78 0.75 0.84 0.81 0.90 0.84 0.92 t j = 125c 0.61 0.68 0.64 0.73 0.68 0.77 0.70 0.79 t j = 25c - 250 - 250 - 150 - 150 a t j = 125c 10 35 10 35 3 20 3 20 ma r jc c/w t j c t stg c document number: ds_d1411045 version: c15 maximum average forward rectified current per device taiwan semiconductor 30a, 100v - 200v trench schottky rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec tsi30h 150cw storage temperature range i r maximum repetitive peak reverse voltage per diode peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode a 200 i fsm 30 trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. note 1: pulse test with pulse width = 300 s, 1% duty cycle instantaneous reverse current per diode at rated reverse voltage typical thermal resistance per diode instantaneous forward voltage per diode (note1) operating junction temperature range 100 120 a i f(av) 150 - halogen-free according to iec 61249-2-21 definition typical applications mechanical data case: i 2 pak unit polarity: as marked voltage rate of change (rated v r ) weight: 1.6 g (approximately) maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) tsi30h 120cw v i f = 15a parameter symbol tsi30h 100cw i 2 pa k tsi30h100cw - tsi30h200cw - 55 to +150 - 55 to +150 15 200 10000 v f tsi30h 200cw 2.7 1 2 3
document number: ds_d1411045 version: c15 order information (example) tsi30h100cw - tsi30h200cw taiwan semiconductor ratings and characteristics curves (t a = 25c unless otherwise noted) 0 5 10 15 20 25 30 35 0 255075100125150 fig. 1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate case temperature ( o c) average forward current (a) tsi30h100cw tsi30h120cw TSI30H150CW tsi30h200cw 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 2 typical forward characteristics tsi30h100cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 4 typical forward characteristics TSI30H150CW instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 3 typical forward characteristics tsi30h120cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c tsi30h100cw c0g green compound ? code packing ? code part ? no.
document number: ds_d1411045 version: c15 tsi30h100cw - tsi30h200cw taiwan semiconductor 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 8 typical reverse characteristics TSI30H150CW percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 10 100 1000 10000 0.1 1 10 100 fig. 10 typical junction capactiance f=1.0mhz vsig=50mvp-p junction capacitance (pf) reverse voltage (v) tsi30h200cw TSI30H150CW tsi30h100cw tsi30h120cw 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 9 typical reverse characteristics tsi30h200cw percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 7 typical reverse characteristics instantaneous reverse current (ma) tst30h120cw percent of rated peak reverse voltage (%) t j =150 o c t j =125 o c t j =25 o c t j =100 o c instantaneous reverse current (ma) tsi30h120cw percent of rated peak reverse voltage (%) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 fig. 6 typical reverse characteristics tsi30h100cw percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j =150 o c t j =125 o c t j =25 o c t j =100 o c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 fig. 5 typical forward characteristics tsi30h200cw instantaneous forward current (a) forward voltage (v) t j =150 o c t j =125 o c t j =25 o c t j =100 o c
min max min max a - 10.50 - 0.413 b 1.14 1.40 0.045 0.055 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 2.41 2.67 0.095 0.105 f 9.07 9.47 0.357 0.373 g 7.79 9.35 0.307 0.368 h 4.40 4.70 0.173 0.185 i 1.14 1.40 0.045 0.055 j 2.20 2.80 0.087 0.110 k 0.35 0.64 0.014 0.025 l 0.95 1.45 0.037 0.057 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1411045 version: c15 marking diagram tsi30h100cw - tsi30h200cw taiwan semiconductor package outline dimensions i 2 pak dim. unit (mm) unit (inch)
creat by art document number: ds_d1411045 version: c15 tsi30h100cw - tsi30h200cw taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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